to-263-2l 1. anode 2. ca thode 3. a node jiangsu changjiang electronics technology co., l t d to-263-2l plastic-encap sulate diodes mbr b 0 ct -b schottky barrier rectifier feat u re ? schottky barrier chip ? guard ri ng die construction for transient protection ? low powe r l o ss, high efficiency ? hig h surge capability ? high current capability and low forward voltage drop maximum ra tings (t a =25 unless otherwise noted) symbol parameter v a lue unit v rrm peak repetitive reverse voltage v rwm working peak r e verse voltage 100 v v r(rms) rms reverse voltage 70 v i o average rectifi ed outp ut current 2 0 a i fsm non-repetitive peak forw a rd surge current @8.3ms half sine wave 1 5 0 a p d power d i ssipation 2 w r ja thermal resistance from junc tion to ambi ent 50 /w t j junction temperature 125 t stg storage tempe r ature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t e st conditions min typ max unit revers e v oltage v (br) i r =0.1ma 100 v revers e cu rrent i r v r = 100 v 10 0 u a *pulse test ) r u z d u g y r o w d j h v f * i f =10a 0. 85 v www.cj-elec.com 1 a- 3 , mar ,201 6
forwar d characteristics ) 2 5 : $ 5 ' 9 2 / 7 $ * ( 9 ) p 9 ) 2 5 : $ 5 ' & |